Method for forming isolation layer of semiconductor device

ABSTRACT

A method for forming an isolation layer of a semiconductor device which is capable of improving isolation characteristics of a highly integrated semiconductor device. The method includes the steps of forming a first insulating layer on a substrate; forming both a first recess in the first isolation region and a plurality of second recesses in the second isolation region by only once applying a photolithography process to the first insulating layer; forming a third recess, which is deeper than the first recess, in a center area of the first recess in the first isolation region; and filling the first, second, third recesses with insulating materials or a thermal oxide layer. In addition, the semiconductor device includes isolation regions have different widths, wherein the first isolation region, which is relatively narrower in width than the second isolation region, has a deeper recess than the second isolation region.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a method for forming an isolation layer of a semiconductor device and, more particularly, to a method for forming an isolation layer of a semiconductor device which is capable of improving isolation characteristics of a highly integrated semiconductor device.

[0003] 2. Discussion of the Related Art

[0004] A conventional method for forming an isolation layer of a semiconductor device will be described with reference to the accompanying drawings.

[0005] Referring to FIGS. 1a through 1 d, there is illustrated a conventional method for forming an isolation layer of a semiconductor device. As shown in FIG. 1a, a first insulating layer 2 is formed on a semiconductor substrate 1, by a CVD process. In this case, the first insulating layer 2 has a thickness of 1 μm. The first insulating layer 2 is partially patterned by an RIE (reactive ion etching) process until a predetermined portion of the substrate 1 is exposed, thereby forming a contact hole. Next, a second insulating layer 3 of a thickness of 0.1 μm is formed on the entire surface inclusive of the exposed substrate 1 by the CVD process.

[0006] Subsequently, etch back is applied to the second insulating layer 3 so as to form a sidewall spacer 3 a and then, the substrate 1 is etched by a predetermined depth with the first insulating layer 2 and the sidewall spacer 3 a serving as masks, as shown in FIG. 1b. In this case, the substrate is etched by a width of 0.1 μm and a depth of 0.5 μm.

[0007] Next, the first insulating layer 2 and the sidewall spacer 3 a, as shown in FIG. 1c, are removed to expose the surface of the substrate 1. Also, the surface of the substrate 1 is annealed for recovering the damage of the substrate 1 caused by the removal of the first insulating layer 2 and the sidewall spacer 3 a, and there is grown an oxide layer 4 of a width of 200 Angstroms is grown on the entire surface of the substrate 1. After the growth, a third insulating layer 5 of a thickness of 3000 Angstroms is formed on the oxide layer 4 by the CVD process and then, a photoresist layer is coated on the third insulating layer 5. Subjected to exposure and development, the photoresist layer is patterned to form a photoresist pattern 6.

[0008] Referring to FIG. 1d, with the photoresist pattern 6 serving as a mask, the third insulating layer 5 is partially removed by the RIE process. After this removal, boron ions are implanted into the substrate three times, and each time the boron ions have a different energy. In this case, the amount of boron ions is 3×10E12 ions/cm² and energies of the ions are 130 KeV, 180 KeV, 260 KeV.

[0009] The conventional method for forming an isolation layer of a semiconductor device has the following problems.

[0010] First, the semiconductor substrate 1 may be damaged due to the etching of an isolation region into the substrate 1. Further, since the isolation region is etched as a very steep slope angle, a focus of charge currency is generated, thereby causing leakage current.

[0011] Second, when the isolation region is a large pattern, an etch width of the substrate 1 is increased so that the planarization of the surface of the isolation region becomes inferior.

SUMMARY OF THE INVENTION

[0012] Accordingly, the present invention is directed to a method for forming an isolation layer of a semiconductor device that substantially obviates one or more of problems due to limitations and disadvantages of the related art.

[0013] An object of the invention is to provide a method for forming an isolation layer of a semiconductor device which has an excellent planarization regardless of a width of the isolation region.

[0014] Another object of the invention is to simplify the forming process steps by carrying out a photolithography process once for both first and second isolation regions at the same time.

[0015] Additional features and advantages of the invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

[0016] To achieve these and other advantages in accordance with the purpose of the present invention, as embodied and broadly described, the method for forming an isolation layer of a semiconductor device in which a substrate has a first isolation region and a second isolation region which is wider than the first isolation region includes the steps of: forming a first insulating layer on a substrate; forming both a first recess in the first isolation region and a plurality of second recesses in the second isolation region by only once applying a photolithography process to the first insulating layer; forming a third recess, which is deeper than the first recess, in center area of the first recess in the first isolation region; and filling the first, second, third recesses with insulating materials or a thermal oxide layer. In addition, in the semiconductor device in which the isolation regions have different widths, the first isolation region which is relatively narrower in a width than the second isolation region has a deeper recess than the second isolation region.

[0017] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention, and wherein:

[0019]FIGS. 1a through 1 d are cross-sectional views showing a conventional method for forming an isolation layer of a semiconductor device;

[0020]FIG. 2 is a layout of a semiconductor device in accordance with a first embodiment of the present invention;

[0021]FIG. 3 is a cross-sectional view cut along line A-A′ showing a structure of FIG. 2;

[0022]FIG. 4 is a cross-sectional view cut along line B-B′ showing a structure of FIG. 2;

[0023]FIGS. 5a-5 g are cross-sectional views showing a method for forming an isolation layer of a semiconductor device in accordance with line A-A′ and line B-B′ of FIG. 2;

[0024]FIG. 6 is a layout of a semiconductor device in accordance with a second embodiment of the present invention;

[0025]FIG. 7 is a cross-sectional view cut along line A-A′ of FIG. 6;

[0026]FIG. 8 is a cross-sectional view cut along line B-B′ of FIG. 6; and

[0027]FIGS. 9a-9 f are cross-sectional views showing a method for forming an isolation layer of a semiconductor device in accordance with line A-A′ and line B-B′ of FIG. 6.

[0028] Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

[0030]FIG. 2 is a layout of a semiconductor device in accordance with a first embodiment of the present invention. FIG. 3 is a cross section cut along line A-A′ showing a structure of FIG. 2, FIG. 4 is a cross section cut along line B-B′ showing a structure of FIG. 2, and FIGS. 5a through 5 g are cross sections showing a method for forming an isolation layer of a semiconductor device in accordance with line A-A′ and line B-B′. In this case, depending on the characteristics of the semiconductor device and its design, widths of the various isolation regions may vary. FIG. 2 illustrates isolation regions of a semiconductor device with varying widths.

[0031] Referring to FIGS. 3 and 4, the isolation region 32 which is relatively narrow, when compared to isolation region 33, and the isolation region 33 which is relatively wide, are etched by a predetermined depth and then, an insulating layer 36 fills the etched areas so that the insulating layer 36 in the isolation regions evenly planarizes the surface of the substrate. However, in the relatively narrow isolation region 32, the substrate is etched deep to form a recess in a conventional manner. In contrast, in the relatively wide isolation region 33, the substrate is partially etched to form a plurality of island regions thereon.

[0032] Referring to FIGS. 5a through 5 f, there is illustrated a method for making an isolation layer of a semiconductor device depending on a width of an isolation region according to a first embodiment of the present invention. These figures are cross-sectional views showing a method for forming an isolation layer corresponding to the FIG. 2 cut along lines A-A′ and B-B′.

[0033] First, in order to make a semiconductor device having a relatively narrow isolation region 32 and a relatively wide isolation region 33, a first insulating layer 31 is formed on a semiconductor substrate 30 and then, a photoresist layer (not shown) is coated on the first insulating layer 31, as shown in FIG. 5a. The photoresist layer is subjected to exposure and development and patterned, so as to form a photoresist pattern (not shown).

[0034] Subsequently, with the photoresist pattern serving as a mask, the first insulating layer 31 is partially etched so as to expose the surface of the substrate 30 thereunder, thereby forming a relatively narrow first isolating layer 32 and a relatively wide second isolation layer 33. In this case, the first insulating layer 31 in the relatively narrow isolation region 32 is removed to expose the entire width of the substrate 30. In contrast, the first insulating layer 31 in the relatively wide isolation region 33 is partially removed to form island regions 37 having a predetermined width and predetermined gaps between the island regions. Herein, the width of the first insulating layer 31 removed in the relatively wide second isolation region 33 is narrower than that in the relatively narrow first isolation region.

[0035] Referring to FIG. 5b, the photoresist pattern is removed. With the first insulating layer 31 as a mask, the substrate exposed in both the first and second isolation regions 32, 33 is etched by a predetermined depth to form a first recess 32 a and a plurality of second recesses 33 a. That is to say, there is formed only one first recess 32 a in the first isolation region 32, while there are formed a plurality of recesses 33 a in the second isolation region 33. As the first insulating layer 31, either a silicon nitride layer or a silicon oxide layer is used. The first and second isolation regions 32, 33 are patterned at the same time.

[0036] In another embodiment, the RIE (reactive ion etching) process or the CDE (chemical dry etching) process is applied to the substrate 30 to form the first and second recesses 32 a, 33 a. Further, the second recesses 33 a are etched to have a narrower width than that of the first recess 32 a and then, ion implantation of a channel stop is performed.

[0037] Next, the CVD process is applied to the substrate 30 inclusive of the first insulating layer 31 to form a protecting layer 34, as shown in FIG. 5c. In this case, either a silicon nitride layer or silicon oxide layer is used as the protecting layer 34, which is formed to be thick enough to fill in the second recesses 33 a between gaps of the first insulating layer 31.

[0038] Referring to FIG. 5d, etch back is applied to the protecting layer 34 thicker than the thickness of the protecting layer 34, so as to form a protecting layer sidewall spacer 34 a in the side of the first recess 32 a and so as to fill in the second recesses 33 a. Since the second recesses 33 a have a narrower width than the first recess 32 a does, a predetermined portion of the substrate 30 is exposed surrounding the protecting layer sidewall spacers 34 a on the side of the first recess 32 a, whereas the second recesses 33 a are filled in completely with the protecting layer 34.

[0039] Thereafter, utilizing the protecting layer sidewall spacer 34 a as a mask, the exposed area of the substrate 30 in the first recess 32 a is etched by a predetermined depth to form a third recess 35 as shown in FIG. 5e. In this case, with the first insulating layer 31 and the protecting layer 34 serving as masks, ion implantation of a channel stop may be performed, and then the protecting layer sidewall spacers 34 a in the first recess 32 a and the protecting layer 34 in the second recess are removed.

[0040] Referring to FIG. 5f, using a CMP (chemical mechanical polishing) process, the first insulating layer 31, in the second isolation region 33 is removed and the island regions 37 of the substrate 30 thereunder are removed by a predetermined depth. With the first insulating layer 31 serving as a mask, ion implantation of a channel stop is carried out.

[0041] Finally, referring to FIG. 5g, a second insulating layer 36 is formed on the entire surface of the substrate inclusive of the first, second, and third recesses 32 a, 33 a, 35, and is subjected to etch back so that the first, second, and third recesses 32 a, 33 a, 35 are filled in with the second insulating layer 36. The first insulating layer 31 is removed, thereby forming an isolation layer for isolating one device from another. In this case, the second insulating layer 36 must be thick enough to fill in the first, second, and third recesses 32 a, 33 a, 35 and then, is subjected to etch back. Herein, the second insulating layer 36 is an oxide layer. The CMP process used as the etch back is subjected to the second insulating layer, thereby planarizing the surface of the substrate 30. In the CMP process, polishing particles such as Alumina or silica, and the polishing solvent such as ammonium fluoride and aqueous ammonia are used.

[0042]FIG. 6 is a layout of a semiconductor device according to a second embodiment of the invention, FIG. 7 is a cross-sectional view cut along line A-A′ of FIG. 6 showing a structure of the device, and FIG. 8 is a cross-sectional view cut along line B-B′ of FIG. 6 showing a structure of the device. FIGS. 9a through 9 f are cross-sectional views cut along line A-A′ and line B-B′ of FIG. 6 showing a method for forming an isolation layer of the semiconductor device.

[0043] How wide an isolation layer is depends on performance of the device and its design.

[0044] Referring to FIG. 6, there is illustrated an isolation layer of a semiconductor device where widths between isolation regions are different.

[0045] Referring to FIG. 7 and FIG. 8, the relatively narrow isolation region 53 and the relatively wide isolation region 54 are etched by predetermined different depths respectively, and the isolation layer 57 is formed to protrude in a round shape from the substrate.

[0046] In the relatively narrow isolation region 53, the recess is etched in a rounded shape, whereas, in the relatively wide isolation region 54, the recesses are connected in a dumbbell shape.

[0047] Referring to FIGS. 9a through 9 f, there is illustrated another method for forming an isolation region for separating devices from one another according to line A-A′ and line B-B′ of FIG. 6.

[0048] Referring to FIG. 9a, in order to making a semiconductor device having a relatively narrow first isolation region 53 and a relatively wide second isolation region 54, a first insulating layer 51 and then a second insulating layer 52 are formed on a semiconductor substrate 50, a mask layer for preventing oxidation is formed, and a photoresist layer (not shown) is coated on the second insulating layer 52. Subjected to exposure and development, the photoresist layer is patterned to form a photoresist pattern (not shown) and then, the first and second insulating layers 51, 52 in the relatively narrow first isolation region 53 and the relatively wide second isolation region 54 respectively are partially removed. The first and second insulating layers 51, 52 in the first isolation region 53 are removed for the entire width to expose the entire substrate thereunder. In contrast, the first and second insulating layers 51, 52 in the relatively wide second isolation region 54 are partially removed so that only island regions 58 having a predetermined width remain. In this case, the first and second insulating layers 51, 52 removed in the relatively wide second isolation region 54 have a width at least narrower than the relatively narrow first isolation region 53.

[0049] The first insulating layer 51 is an oxide layer and the second insulating layer 52 is a silicon nitride layer. The first and second insulating layers 51, 52 are mask layers for preventing oxidation. A stack of a silicon nitride layer and a silicon oxide layer is used instead of a stack of an oxide layer and a silicon nitride layer.

[0050] Referring to FIG. 9b, with the first insulating layer 51 and the second insulating layer 52 serving as masks, the exposed area of the substrate 50 in the first and second isolation regions 53, 54 is etched by a predetermined depth to form first and second recesses 53 a, 54 a. In a sectional view, there is one first recess 53 a in the first isolation region 53, and there are a plurality of second recesses 54 a in the second isolation region 54. The RIE process or the CDE process is applied to the substrate 50 to form first and second recesses 53 a, 54 a. After the second recesses 54 a are formed to have a width narrower than that of the first recess 53 a, ion implantation of a channel stop is carried out with the photoresist layer and the first and second insulating layers 51, 52 serving as masks.

[0051] Referring to FIG. 9c, the photoresist layer is removed, and the CVD process is applied to the substrate 50 inclusive of the second insulating layer 52, thereby forming a protecting layer 55, which is formed of a silicon oxide and has a thickness that fill in the second recesses 54 a.

[0052] Referring to FIG. 9d, etch back is applied to the protecting layer 55 thicker than the thickness of the protecting layer 55 so that the protecting layer 55 forms a protecting layer sidewall spacer 55 a in the first recess 53 a and fills in the second recesses 54 a. In other words, since the second recesses 54 a have a narrower width than the first recess 53 a, a predetermined portion of the substrate is exposed surrounded by the protecting layer sidewall spacer 55 a formed in the first recess 53 a. In contrast, the second recesses 54 a are filled in with the protecting layer 55.

[0053] Referring to FIG. 9e, with the protecting layer sidewall spacer 55 a serving as a mask, the etched area of the substrate 50 in the first recess 53 a is etched by a predetermined depth to form a third recess 56. In this case, with the first and second insulating layers 51, 52 and the protecting layer 55 serving as masks, ion implantation of a channel stop may be achieved, and the protecting layer sidewall spacer 55 a in the first recess 53 a and the protecting layer 55 in the second recesses 54 a are removed.

[0054] Referring to FIG. 9f, with the first and second insulating layers 51, 52 serving as masks, the first, second, and third recesses 53 a, 54 a, and 56 are annealed in an oxide environment at a temperature not less than 800 ° C., thereby forming a third insulating layer 57 of a thickness of 3000-5000 Angstroms. At the same time, in the second isolation region 54, the third insulating layer 57 and the first insulating layer 51 are interconnected to each by a “bird's beak”. Thereafter, a portion 58 of the first insulating layer 51 is thicker than a portion 59 of the first insulating layer 51.

[0055] As shown in FIG. 9g, the second insulating layer 52 and the first insulating layer 51 are selectively removed to leave the thicker portion 58 of the first insulating layer 51. The third insulating layer 57 is an oxide layer.

[0056] The methods of the present invention have the following advantages.

[0057] First, since the isolation layer is formed vertically as well as laterally in the first and second isolation regions, insulation characteristics of the device are enhanced.

[0058] Second, since a mask is used to form the first and second isolation regions in the photolithography process at the same time, the process steps are simplified.

[0059] The invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims. 

What is claimed is:
 1. A method for forming an isolation layer of a semiconductor device in which a substrate has a first isolation region and a second isolation region, wider than the first isolation region, comprising the steps of: forming a first insulating layer on a substrate; forming both a first recess in the first isolation region and a plurality of second recesses in the second isolation region by only once applying a photolithography process to the first insulating layer; forming a third recess, deeper than the first recess, in center area of the first recess in the first isolation region; and filling the first recess, the plurality of second recess, as the third recess with an insulating material or a thermal oxide layer.
 2. A method for forming an isolation layer of a semiconductor device in which a substrate has a first isolation region and a second isolation region, wider than the first isolation region, said method comprising the steps of: forming a first insulating layer on a substrate; patterning the first insulating layer to form the first and second isolation regions and forming a first recess in the first isolation region and a plurality of second recesses in the second isolation region; forming a second insulating layer on the first insulating layer; forming a side wall spacer in the first recess and filling in the plurality of second recesses with the second insulating layer etching an exposed area of the substrate in the first isolation region with the sidewall spacer of the first recess as a mask so as to form a third recess and removing the second insulating layer; removing the first insulating layer in the second isolation region and a portion of island regions forced thereunder; and filling in the first, second, and third recesses with a third insulating layer and removing the first and second insulating layers.
 3. The method of claim 2, wherein the plurality of second recesses have a width narrower than a width of the first recess.
 4. The method of claim 2, wherein the substrate is subject to an RIE (reactive ion etching) process or a CDE (chemical dry etching) process to form the first recess and the plurality of second recesses.
 5. The method of claim 2, wherein the third insulating layer is thick enough to fill in the first access, the plurality of second recesses, and the third recess.
 6. The method of claim 2, to the second insulating layer is formed by a CVD process.
 7. The method of claim 2, wherein the first insulating layer is removed with a CMP (chemical mechanical polishing) process.
 8. The method of claim 7, wherein the CMP process utilizes, polishing particles including alumina and silica, and polishing solvents including ammonium fluoride and aqueous ammonia.
 9. The method of claim 2, wherein the third recess is formed in a center area of the first recess and deeper than the first recess.
 10. The method of claim 2, wherein the first insulating layer is a silicon nitride layer or a silicon oxide layer.
 11. The method of claim 2, wherein the relatively narrow first isolation region and the relatively wide second isolation region are simultaneously patterned.
 12. The method of claim 2, wherein the second insulating layer is a silicon nitride layer or a silicon oxide layer.
 13. The method of claim 2, wherein the second insulating layer is thick enough to fill in the plurality of second recesses.
 14. A method for forming an isolation layer of a semiconductor device in which a substrate has a first isolation region and a second isolation region, wider than the first isolation region said method, comprising the steps of: forming first and second insulating layers on a substrate; patterning the first and second insulating layers to form the first and second isolation regions; forming a first recess in the first isolation region and a plurality of second recesses in the second isolation region; forming a third insulating layer on the second insulating layer to form a sidewall spacer in the first recess and to fill in the plurality of second recesses with the third insulating layer; etching an exposed area of the substrate in the first isolation region by a predetermined depth with a side wall spacer of the first recess acting as a mask so as to form a third recess and removing the third insulating layer; annealing to forming a fourth insulating layer in the first recess, the plurality of second recesses, and the third recess by annealing; and removing the first and second insulating layers.
 15. The method of claim 14, wherein a stack of the first and second insulating layers both formed of either an oxide layer or a nitride layer form a mask layer for preventing oxidation.
 16. The method of claim 14, wherein an RIE process or a CDE process is utilized to form the first recess and the plurality of second recesses.
 17. The method of claim 14, wherein a width of each of the plurality of second recesses is narrower a width of the first recess.
 18. The method of claim 14, wherein the fourth insulating layer is annealed at a temperature of 800° C. and has a thickness of 3000-5000 Angstroms. 